.. _eeprom_emulation_base_test: Eeprom emulation 功能测试 ========================================== 概述 ------ EEPROM BASE示例对模拟eeprom的write、read、flush接口进行测试,主要包括以下测试内容: **写入** - 写入4笔数据 - 查看返回值是否正确 **读取** - 读出写入的4笔数据 - 查看返回值是否正确 - 与写入数据进行比较 **数据更新** - 更新前两笔的数据 - 查看更新情况 **数据整理** - 整理所设置区域的数据,保留最新数据 板级设置 ------------ - 无需特殊设置 .. note:: - 一次写入的数据不要超过一个erase_size - 需在user_config.h文件中设定EEPROM_MAX_VAR_CNT限制写入数据笔数的最大数量,默认为100笔 - 相关写入情况,可修改debug等级查看 运行示例 ------------ 当工程运行后,串口会打印以下信息: .. code-block:: console ------------ flash->eeprom init ok ----------- start address: 0x80fd0000 sector count: 16 flash earse granularity: 4096 version: 0x4553 end address: 0x80fe0000 data write addr = 0x80fd0021, info write addr = 0x80fdffa4, remain flash size = 0xff83 valid count percent info count( 0 / 0 ) ---------------------------------------------- ---------------------------------------------- eeprom emulation demo ---------------------------------------- 1 - Test eeprom write 2 - Test eeprom read 3 - Test eeprom update data 4 - Test eeprom flush whole area 5 - show area base info Others - Show index menu ◆1 ◆2 var1 = abcdef var2 = 1234 var3 = hello,world var4 = eeprom_demo ◆3 ◆5 ------------ flash->eeprom init ok ----------- start address: 0x80fd0000 sector count: 16 flash earse granularity: 4096 version: 0x4553 end address: 0x80fe0000 data write addr = 0x80fd0072, info write addr = 0x80fdff04, remain flash size = 0xfe92 valid count percent info count( 4 / 10 ) ---------------------------------------------- ◆2 var1 = qwe var2 = 5678 var3 = hello,world var4 = eeprom_demo ◆4 ------------ flash->eeprom init ok ----------- start address: 0x80fc0000 sector count: 16 flash earse granularity: 4096 version: 0x4553 end address: 0x80fd0000 data write addr = 0x80fc0021, info write addr = 0x80fcffa4, remain flash size = 0xff83 valid count percent info count( 4 / 4 ) ----------------------------------------------