11.2. Eeprom emulation performance test

11.2.1. Overview

The EEPROM PERF example runs performance testing on simulated EEPROM with 100 data records and 500 records.It’s contain the follow:

config time

  • format area

  • write prepared data

  • test config time

flush time

  • write prepared data

  • test flush time

read time

  • write prepared data

  • test read time

11.2.2. Board setting

  • No special settings

Note

  • Do not write more than one erase size data once

  • Eeprom emulation needs to be set EEPROM_MAX_VAR_CNT which default count 100 in user_config.h to limit the maximum number of blocks

  • The relevant writing situation can be viewed by modifying the debug level

11.2.3. Running the example

The serial port output is shown below:

 eeprom emulation perf test
----------------------------------------
 1 - Test config perf
 2 - Test flush perf
 3 - Test read perf
 4 - show area base info
 Others - Show index menu

◆1

------------ flash->eeprom init ok -----------
start address: 0x80fe0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80ff0000
data write addr = 0x80fe0000, info write addr = 0x80feffe4, remain flash size = 0xffe4
valid count percent info count( 0 / 0 )
----------------------------------------------


------------ flash->eeprom init ok -----------
start address: 0x80fe0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80ff0000
data write addr = 0x80fe0fa0, info write addr = 0x80fee0a4, remain flash size = 0xd104
valid count percent info count( 100 / 500 )
----------------------------------------------

eeprom config run time=(32451)us

◆2
------------ flash->eeprom init ok -----------
start address: 0x80fe0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80ff0000
data write addr = 0x80fe0fa0, info write addr = 0x80fee0a4, remain flash size = 0xd104
valid count percent info count( 100 / 500 )
----------------------------------------------

eeprom flush run time=(346190)us

◆3
------------ flash->eeprom init ok -----------
start address: 0x80ff0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x81000000
data write addr = 0x80ff0320, info write addr = 0x80fff9a4, remain flash size = 0xf684
valid count percent info count( 100 / 100 )
----------------------------------------------

eeprom read run time=(29)us

◆4
------------ flash->eeprom init ok -----------
start address: 0x80ff0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x81000000
data write addr = 0x80ff12c0, info write addr = 0x80ffda64, remain flash size = 0xc7a4
valid count percent info count( 100 / 600 )
----------------------------------------------