11.1. Eeprom emulation 功能测试

11.1.1. 概述

EEPROM BASE示例对模拟eeprom的write、read、flush接口进行测试，主要包括以下测试内容：

写入

写入4笔数据
查看返回值是否正确

读取

读出写入的4笔数据
查看返回值是否正确
与写入数据进行比较

数据更新

更新前两笔的数据
查看更新情况

数据整理

整理所设置区域的数据，保留最新数据

11.1.2. 板级设置

无需特殊设置

备注

一次写入的数据不要超过一个erase_size
需在user_config.h文件中设定EEPROM_MAX_VAR_CNT限制写入数据笔数的最大数量，默认为100笔
相关写入情况，可修改debug等级查看

11.1.3. 运行示例

当工程运行后，串口会打印以下信息：

------------ flash->eeprom init ok -----------
start address: 0x80fd0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80fe0000
data write addr = 0x80fd0021, info write addr = 0x80fdffa4, remain flash size = 0xff83
valid count percent info count( 0 / 0 )
----------------------------------------------

----------------------------------------------

 eeprom emulation demo
----------------------------------------
 1 - Test eeprom write
 2 - Test eeprom read
 3 - Test eeprom update data
 4 - Test eeprom flush whole area
 5 - show area base info
 Others - Show index menu

◆1

◆2
var1 = abcdef
var2 = 1234
var3 = hello,world
var4 = eeprom_demo

◆3

◆5
------------ flash->eeprom init ok -----------
start address: 0x80fd0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80fe0000
data write addr = 0x80fd0072, info write addr = 0x80fdff04, remain flash size = 0xfe92
valid count percent info count( 4 / 10 )
----------------------------------------------

◆2
var1 = qwe
var2 = 5678
var3 = hello,world
var4 = eeprom_demo

◆4
------------ flash->eeprom init ok -----------
start address: 0x80fc0000
sector count: 16
flash earse granularity: 4096
version: 0x4553
end address: 0x80fd0000
data write addr = 0x80fc0021, info write addr = 0x80fcffa4, remain flash size = 0xff83
valid count percent info count( 4 / 4 )
----------------------------------------------